北京谱仪漂移室读出电子学校准电路

本文介绍的电路可同时进行时间和电荷校准,它的校准量程大,精度高,稳定性好,可输出864路指数形校准信号,并可手动或程控。它的时间校准精度优于±250ps,电荷量校准精度优于±1％。     

平巷掘进技术的发展途径

回顾了国际上平巷掘进设备及其配套、工艺技术方面的进展，给我国平巷掘进技术水平作了定位。     

Electromagnetic Resistive Drift Instability in Current Carrying Low Temperature Tokamak Edges

It is shown that the purely growing electrostatic rippling mode can couple with the shear Alfven wave to give rise to an oscillatory electromagnetic instability in tokamak edge regions. This mechanism can be one of the causes of electromagnetic fluctuations observed near plasma edges. This instability can occur only in the very low temperature regions where resistivity fluctuations can become important due to large electron-ion collision frequency.     

冲积性河流横断面形态调整研究方法及应用分析

总结了中外学者对冲积性河流横断面形态调整规律研究的现状,从研究方法上对其进行归纳和分析。内容涉及到经验公式、终极假说和力学理论分析等相关领域,分析了横断面形态与水沙及河床边界条件的相关关系。并对渭河下游河道的横断面情况作了简要分析,建立了主槽河宽与水沙及河床前期边界条件的相关关系。最后总结了三种方法的特点,并对以后研究工作提出建议。     

Steady-state and transient photoconductivity in hydrogenated amorphous silicon nitride films

Amorphous SiN_x:H films were prepared by the rf glow-discharge decomposition of ammonia/silane gas mixture with varying nitrogen content. The steady-state photoconductivity and its dependence on light intensity have been investigated in a-SiN_x:H as a function of temperature between 100 and 420 K. The electron drift mobility of a set of SiN_x:H samples has been determined from their steady-state photoconductivity and response time measurements. The results suggest that electron drift mobility of the samples was nearly unchanged for a low nitrogen content. Two samples containing lowest nitrogen showed higher photoconductivity than that of unalloyed sample within a temperature range including the room temperature.     

Influence of deposition parameters on hole mobility in polymorphous silicon

Time-of-flight transient photoconductivity measurements reveal a monotonic increase with the deposition pressure in the hole mobility in polymorphous silicon for samples deposited under hydrogen dilution. With helium dilution, a maximum mobility that matches the highest value from H-dilution samples is measured at the intermediate pressure of 1.4 Torr. The deposition rate of those samples is twice the rate for the H-dilution ones. For the samples with the best hole mobilities, the valence-band tail is comparable to the one of standard hydrogenated amorphous silicon.     

异型材挤出口模内的流动模拟

本文根据挤出机理，对口模内的流动行为进行适当的简化和假定，建立了挤出口模内流动分析的数学模型，并采用横截面／假想区域法实现了复杂异型材挤出口模内的数值模拟，数值分析结果与三维有限元解和解析解的对比，取得了满意的效果。     

用EGS4分析9MeV行波直线加速器屏蔽系统

采用了国际上广泛使用的ＭｏｎｔｅＣａｒｌｏ模拟计算程序ＥＧＳ４对海关集装箱检测系统用加速器屏蔽系统进行了辐射模拟分析，与实际测试数据进行分析、比较，解释了特殊剂量分布的原因，提出了系统改进的参考方案。     

温度,压力对漂移室气体增益的影响

研究了温度及气体压力对漂移室（工作于正比区）气体放大倍数的影响，温度和气体压力的变化范围分别是５￣４０℃及９０￣１０５ｋＰａ。用实验数据拟合得到了函数关系并测量了几种饱和度下函数中的参数值。     

引入漂移特性的用户兴趣模型优化研究

根据用户浏览网页时的操作行为,通过量化的方法建立起用户兴趣模型来反映用户兴趣,从而针对不同用户推荐其可能感兴趣的文章。基于兴趣模型的更新效率问题和用户兴趣的漂移特性,引入兴趣模型的时间分段机制和时间衰减机制,对兴趣模型进行了持续优化。实验表明,优化的兴趣模型在系统性能上有较大的提升,并能较好地反映出用户的兴趣变化,对于用户兴趣的表征更加准确,从而进一步提高了兴趣模型推荐文章的准确率。